Tensile Lattice Distortion Does Not Significantly Affect Oxygen Transport in Yttria-stabilized Zirconia (YSZ)– CeO2 Hetero-Interfaces

Supporting Information Tensile Lattice Distortion Does Not Significantly Affect Oxygen Transport in Yttria-stabilized Zirconia (YSZ)–CeO2 Hetero-Interfaces

Cerium Reduction at the Interface between Ceria and Yttria-stabilised Zirconia and Implications for Interfacial Oxygen Non-stoichiometry

CeO2 and Y2O3-stabilized zirconia (YSZ) are two typical candidates for electrolyte materials in solid oxide fuel cells attributed to their high ion conductivities. However, the conductivities of these materials are closely connected with high temperatures. Therefore, it is important to develop electrolyte materials which can conduct oxygen ions at lower temperatures. Recent experiments have sho...

Analysis of the Performance of the Electrodes in a Natural Gas Assisted Steam Electrolysis Cell

The performance of solid oxide electrolysis (SOE) cells while operating in the natural gas assisted steam electrolysis (NGASE) mode was evaluated. The SOE cells used yttria-stabilized-zirconia (YSZ) as the oxygen ion conducting electrolyte, Co–CeO2–YSZ as the H2–H2O electrode, and Pd-doped CeO2 YSZ source as the CH4-oxidation electrode. The cell electrochemical performance was evaluated as a fu...

First-principles thermodynamic modeling of atomic ordering in yttria-stabilized zirconia

Yttria-stabilized zirconia YSZ is modeled using a cluster expansion statistical thermodynamics method built upon a density-functional theory database. The reliability of cluster expansions in predicting atomic ordering is explored by comparing with the extensive experimental database. The cluster expansion of YSZ is utilized in lattice Monte Carlo simulations to compute the ordering of dopant a...

Effect of ion implantation doping on electrical properties of yttria-stabilized zirconia thin films

The change in conductivity of Fe and Ti implanted if-sputtered layers of yttria-stabilized zirconia (YSZ) was studied as a function of the temperature (400-800 °C) and oxygen partial pressure. In an oxidized state and in the temperature range of 400600 ° C, the conductivity of the Fe implanted YSZ film ( 15 keV, 8 × 10 '6 at.cm 2) was dominated by the n-type electronic conductivity of a thin Fe...